TSM10N06 60v n-channel mosfet 1/6 version: a10 to - 252 (dpak) product summary v ds (v) r dson (m ) i d (a) 60 65 @ v gs = 10v 10 80 @ v gs = 5v 10 110 @ v gs = 4v 9 features advance trench process technology high density cell design for ultra low on-resistan ce application load switch pa switch ordering information part no. package packing TSM10N06cp ro to-252 2.5kpcs / 13 reel absolute maximum rating (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current i d 10 a pulsed drain current i dm 50 a continuous source current (diode conduction) a,b i s 10 a total power dissipation @ t c =25c p dtot 45 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 2.78 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 50 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on fr4 board, t 10 sec. block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
TSM10N06 60v n-channel mosfet 2/6 version: a10 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 60 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1 -- 3 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 60v, v gs = 0v i dss -- -- 2 a drain-source on-state resistance v gs = 10v, i d = 10a r ds(on) -- -- 65 m v gs = 5v, i d = 10a -- -- 80 v gs = 4v, i d = 9a -- -- 110 forward transconductance v ds = 25v, i d = 6a g fs -- 13 -- s diode forward voltage i s = 2a, v gs = 0v v sd -- 0.9 1.2 v dynamic 2 total gate charge v ds = 30v, i d = 9a, v gs = 4.5v q g -- 10.5 16 nc gate-source charge q gs -- 3.5 -- gate-drain charge q gd -- 4.2 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 1100 -- pf output capacitance c oss -- 90 -- reverse transfer capacitance c rss -- 55 -- switching 2,3 turn-on delay time v dd = 30v, r l = 5.4 , i d = 9a, v gen = 10v, r g = 1 t d(on) -- 10 15 ns turn-on rise time t r -- 15 25 turn-off delay time t d(off) -- 25 40 turn-off fall time t f -- 10 15 notes 1: pulse test: pw 300s, duty cycle 2% notes 2: for design aid only, not subject to production tes ting. notes 3 : switching time is essentially independent of oper ating temperature.
TSM10N06 60v n-channel mosfet 3/6 version: a10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
TSM10N06 60v n-channel mosfet 4/6 version: a10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area
TSM10N06 60v n-channel mosfet 5/6 version: a10 to-252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.3bsc 0.09bsc a1 4.6bsc 0.18bsc b 6.80 7.20 0.268 0.283 c 5.40 5.60 0.213 0.220 d 6.40 6.65 0.252 0.262 e 2.20 2.40 0.087 0.094 f 0.00 0.20 0.000 0.008 g 5.20 5.40 0.205 0.213 g1 0.61 0.78 0.024 0.030 g2 0.51 0.71 0.020 0.028 h 0.35 0.65 0.014 0.026 i 0.90 1.50 0.035 0.059 j 2.20 2.80 0.087 0.110 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.67
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